AccuThermo AW 610 快速退火爐 或保護氣氛熱處理爐
- 公司名稱 Allwin21 Corp
- 品牌
- 型號 AccuThermo AW 610
- 產地 USA
- 廠商性質 生產廠家
- 更新時間 2017/7/5 5:21:47
- 訪問次數 2930
聯系我們時請說明是化工儀器網上看到的信息,謝謝!
快速退火爐AG Heatpulse 610; AG Heatpulse 4100 ;AG Heatpulse 4108; 打膠機 GASONICS AURA 1000 ; GASONICS AE2001; GASONICS AE 2000LLL; 打膠機 MATRIX 105/106/303/403 ; 等離子刻蝕機 TEGAL 901/903; 探針臺 EG2001; EG 2010; EG 1034; 測試儀 HP4062;HP4145; AW-PCM測試軟件.〈br〉
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Allwin21 Corp (www.allwin21.com) 是一家總部設在美國硅谷的專業半導體設備與技術服務公司。我公司可提供全新的或翻新的快速退火爐或保護氣氛熱處理爐Heatpulse AG610 、EG2001/2010/1034探針臺;HP4062/HP4145測試儀;AW-PCM測試軟件
• 歐姆接觸快速合金;
• 硅化物合金退火;
• 氧化物生長;
• 其它快速熱處理工藝。
AccuThermo AW 610 is a desktop rapid thermal processor which uses high-intensity, visible radiation to heat single wafer for short periods at precisely controlled temperatures. These capabilities, combined with the heating chamber''s cold-wall design, superior heating uniformity advanced temperature control technologyAW 900 new software, provide significant advantages over conventional furnace processingconventional RTP systems.
Rapid thermal processing (or RTP) refers to a semiconductor manufacturing process which heats silicon wafers to high temperatures (up to 1200 C or greater) on a timescale of several seconds or less. The wafers must be brought down (temperature) slow enough however, so they do not break due to thermal shock..Such rapid heating rates are attained by high intensity lamps process. These processes are used for a wide variety of applications in semiconductor manufacturing including dopant activation, thermal oxidation, metal reflowchemical vapor deposition.
Rapid thermal anneal (RTA) is a process used in semiconductor device fabrication which consists of heating a single wafer at a time in order to affect its electrical properties. Unique heat treatments are designed for different effects. Wafers can be heated in order to activate dopants, change film-to-film or film-to-wafer substrate interfaces, densify deposited films, change states of grown films, repair damage from ion implantation, move dopants or drive dopants from one film into another or from a film into the wafer substrate. Rapid thermal anneals are performed by equipment that heats a single wafer at a time using lamp based heating that a wafer is brought near. Unlike furnace anneals they are short in duration, processing each wafer in several minutes. Rapid thermal anneal is a subset of processes called Rapid Thermal Process (RTP).
AG Associates Heatpulse is one of the most famous RTP equipment manufacturers. Many Integrated Chip companies, R&D centers, Institutes all over the world have been using AG Heatpulse Systems.
Allwin21 Corp can provide the following refurbished RTP equipment
- AG Heatpulse 210
- AG Heatpulse 410
- AG Heatpulse 610
Heatpulse 210 Heatpulse 610
Allwin21 Corp. can also provide Allwin21 Corp proprietary AW Control SoftwareSuperior Temperature Control Technology to upgrade the refurbished equipment which provides the following significant advantages
- Integrated process control system
- Real time graphics display
- Real time process data acquisition, display,analysis
- Programmed comprehensive calibrationdiagnostic functions
- Better performancemaintenance than the original systems
Allwin21 is the exclusive licenced manufacture for AG Heatpulse 610. Allwin21 is manufacturing the AccuThermo AW-610,originally the AG Heatpulse 610.The AccuThermo AW-610 has innovative softwaremore advanced temperature control technologies.
New AccuThermo AW 610
New AccuThermo AW 810M
AccuThermo AW 610’s key features include:
- Advanced ERP Pyrometer for precise high temperature measurement
- Add timer watch for the oven safety issue (the original has no safety interlock for the computer locks up, chamber would be burned if the computer locks up when process running).
- The new software with power summary function to detect either lamp failure or sensor failure
- Manual Operation
- Use Sumpower as a parameter to control the uniformity of the wafer.
- Closed-loop temperature control with pyrometer or thermocouple temperature sensing.
- Precise time-temperature profiles tailored to suit specific process requirements.
- High-intensity visible radiation heats wafers for short periods. Fast heatingcooling rates unobtainable in conventional technologies.
- Consistent wafer-to-wafer process cycle repeatability.
- Elimination of external contamination.
- Small footprintenergy efficiency.
- Software calibrationeasy to be done.
- More functionsI/O hardware “exposed” for easier maintenancetrouble shooting.
- It is easy to edit recipe with GUIgraph display.
- Save all process data on the computer hard disk.
- A/DD/A precision is 14 to 16 bits.
- Detect in processwith color curve displayed on the screen.
- Lamp damage detect in process.
- Sensor status detect function.
- On line help function
AccuThermo AW 610 RTA RTP is a versatile tool, which is useful for many applications:
• Ion Implant Activation
• Polysilicon Annealing
• Oxide Reflow
• Silicide Formation
• Contact Alloying
• OxidationNitridation
• GaAs Processing
For a bibliographyreprints of technical journal articles regarding these AccuTherm applications, contact the Allwin21 Corp. Marketing Communications Department.
Rapid thermal processing (or RTP) refers to a semiconductor manufacturing process which heats silicon wafers to high temperatures (up to 1200 C or greater) on a timescale of several seconds or less. The wafers must be brought down (temperature) slow enough however, so they do not break due to thermal shock..Such rapid heating rates are attained by high intensity lamps process. These processes are used for a wide variety of applications in semiconductor manufacturing including dopant activation, thermal oxidation, metal reflow and chemical vapor deposition.
Rapid thermal anneal (RTA) is a process used in semiconductor device fabrication which consists of heating a single wafer at a time in order to affect its electrical properties. Unique heat treatments are designed for different effects. Wafers can be heated in order to activate dopants, change film-to-film or film-to-wafer substrate interfaces, densify deposited films, change states of grown films, repair damage from ion implantation, move dopants or drive dopants from one film into another or from a film into the wafer substrate. Rapid thermal anneals are performed by equipment that heats a single wafer at a time using lamp based heating that a wafer is brought near. Unlike furnace anneals they are short in duration, processing each wafer in several minutes. Rapid thermal anneal is a subset of processes called Rapid Thermal Process (RTP).
Rapid thermal processing (RTP) provides a way to rapidly heat wafers to an elevated temperature to perform relatively short processes, typically less than 1-2 minutes long. Over the years, RTP has become essential to the manufacture of advanced semiconductors, where it is used for oxidation, annealing, silicide formation and deposition.
An RTP system heats wafers singly, using radiant energy sources controlled by a pyrometer that measures the wafer's temperature. Previous thermal processing was based on batch furnaces, where a large batch of wafers is heated in a tube. Batch furnaces are still widely used, but are more appropriate for relatively long processes of more than 10 minutes.
RTP is a flexible technology that provides fast heating and cooling to process temperatures of ~200-1250??C with ramp rates typically 20-200??C/sec, combined with excellent gas ambient control, allowing the creation of sophisticated multistage processes within one processing recipe. This capability to process at elevated temperatures for short time periods is crucial because advanced semiconductor fabrication requires thermal budget minimization to restrict dopant diffusion. Replacement of the slower batch processes with RTP also enables some device makers to greatly reduce manufacturing cycle time, an especially valuable benefit during yield ramps and where cycle-time minimization has economic value.
RTP systems use a variety of heating configurations, energy sources and temperature control methods. The most widespread approach involves heating the wafer using banks of tungsten-halogen lamps because these provide a convenient, efficient and fast-reacting thermal source that is easily controlled. In a typical RTP system , the wafer is heated by two banks of linear lamps ?a one above and one below it. The lamps are further subdivided into groups or zones that can be individually programmed with various powers to maximize temperature uniformity. In RTP, the energy sources face the wafer surfaces rather than heating its edge, as happens in a batch furnace. Thus, RTP systems can process large wafers without compromising process uniformity or ramp rates. RTP systems frequently incorporate the capability to rotate the wafer for better uniformity.
An important RTP application is the activation of ion-implanted dopants to form ultrashallow junctions. This requires fast ramp and cooling capabilities because the wafer must be heated to ~1050??C to anneal out ion implantation damage and activate the implanted dopant species. However, the time at temperature must be reduced to minimize diffusion. This has led to the spike-anneal approach, where the wafer is ramped to a high temperature and then cooled immediay.
Another indispensable RTP application is in the formation of silicides. In this process, metal films react with the silicon on source/drain and gate regions to form silicides. In advanced logic processes, the metal is usually cobalt, but nickel is being explored for the 65 nm node. Silicide formation processes are usually performed at <500??C, and wafers must be kept in a very pure gas ambient because metal films can be sensitive to oxidation. RTP systems are ideal, because they have small chamber volumes easily purged with high-purity gas, creating a very clean environment.
RTP is also increasingly important in oxidation applications, where the capability to use short process times at high temperatures and a wide variety of gas ambients provides excellent quality films and superior process control. RTP-grown oxides are often used for gate dielectrics, tunnel oxides and shallow-trench isolation liners. The use of steam in the gas ambient has opened new RTP applications. One of special interest for advanced DRAM technology is the use of a hydrogen-rich steam ambient for selective oxidation of gate stacks that include tungsten.
Recently, RTP-like processing has found applications in another rapidly growing field ?a solar cell fabrication. RTP-like processing, in which an increase in the temperature of the semiconductor sample is produced by the absorption of the optical flux, is now used for a host of solar cell fabrication steps, ncluding phosphorus diffusion for N/P junction formation and impurity gettering, hydrogen diffusion for impurity and defect passivation, and formation of screen-printed contacts using Ag-ink for the front and Al-ink for back contacts, respectively.
Some solar cell companies have successfully applied our advanced Rapid Thermal Processing (RTP) technology to its process for creating highly efficient and durable CIGS solar cells. This eliminates a key process bottleneck found in many state-of-the-art process implementations and enables the use of low-cost substrates in ways that were not considered possible before.
In Rapid Thermal Processing, a layer is heated for a very brief period only in a highly controlled way. For instance, RTP techniques can flash-heat a layer for just several picoseconds and put energy just into the top several nanometers of a layer in a highly controlled way -- while leaving the rest of the layer unaffected.
RTP has a secondary benefit of reducing the energy payback time of their solar cells to less than two months (for the full panel). By comparison, a typical silicon solar panel has an energy payback time of around three years, and a typical vacuum-deposited thin-film cell has one of 1-2 years. The energy payback time is the time that a solar panel has to be used in order to generate the amount of energy that it required to be produced.
Vacuum Rapid Thermal processing ag 210 ag2101 JIPELEC ag 610 ag2146 used-line Jipelec JetClip sg JetStar AG bid service JetClip AG AST SHS2000 AST STEAG 2800 ssintegration Techlink JetClip sg Rapid Thermal Oxide ssintegration Jipelec JetFirst AG Heatpulse410 ag410 specequipment RLA-3108 AG 310 Mattson annealsys rapid thermal processes Jipelec JetStar heatpulse ag 2146 ssi Koyo Thermo Systems AG Heatpulse210 AST STEAG-MATTSON 2800 heat pulse Solaris Eclipse Rapid Thermal Annealing modularpro RLA-1000 AG Heatpulse rapid thermal processor Steag AST SHS2000 Solaris 75 AG ag210 bidservice Solaris75 STEAG Electronic Systems ag associates eng-sol.Annealsys RLA-3000 Rapid thermal Anneal Engineering Solutions annealsys Heatpulse 410 rapid thermal process eng-sol Solaris 150 AG Heatpulse 210 STEAG AG Heatpulse 310 JetFirst Rapid Thermal Annealer AS-Master STEAG Electronic Systems Rapid Thermal Oxidation RTA RTP modularpro.RTO Modular Process Technology Jipelec JetClip STEAG 2800 ag 2101 Solaris150 AG Heatpulse310 ag610 AS-One Solaris AG310 ag2106 AS-Micro .
Allwin21 is the exclusive licensed manufacturer of AG Heatpulse 610 Rapid Thermal Processor. Allwin21 is manufacturing the AccuThermo AW 410,AccuThermo AW 610,AccuThermo AW 810,AccuTherm AW 820, AtmosPress Rapid Thermal Processors and AccuThermo AW 610V,AccuThermo AW 820V vacuum Rapid Thermo Processors.Compared with traditional RTP system, Allwin21"s AccuThermo AW RTPs have innovative software and more advanced temperature control technologies.